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LSD4 Defect Mapping
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LSD4 Defect Mapping

The laser scanning defect imager is an upgraded version of the Laser Beam Induced Current (LBIC) test.
It utilizes a laser beam with a wavelength energy greater than the semiconductor bandgap to irradiate the semiconductor, generating electron-hole pairs.
By rapidly scanning the surface of the sample, it obtains an image distribution that reveals changes in internal current to analyze various defect distributions.
This helps in analyzing the quality of sample preparation and aids in process improvement.

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Overview

  • The laser scanning defect imager is an upgraded version of the Laser Beam Induced Current (LBIC) test.
  • It utilizes a laser beam with a wavelength energy greater than the semiconductor bandgap to irradiate the semiconductor, generating electron-hole pairs.
  • By rapidly scanning the surface of the sample, it obtains an image distribution that reveals changes in internal current to analyze various defect distributions.
  • This helps in analyzing the quality of sample preparation and aids in process improvement.

Key Features

  • Scanning the distribution of photo-generated current
  • Scanning the distribution of photovoltage
  • Scanning the distribution of open-circuit voltage and short-circuit current.
  • Analyzing surface contamination
  • Analyzing the distribution of short-circuit regions.
  • Identifying and analyzing microcrack regions
  • Analyzing the distribution of minority carrier diffusion length (optional feature)

Specification

 

Item Parameter Description
Function
  1. Utilizing laser beams with wavelengths that have higher energy than the semiconductor bandgap to generate electron-hole pairs in the semiconductor, exploring the impact of the depletion region on internal current changes to understand and analyze various defect distributions as a direction for process improvement.
  2. Capable of scanning the distribution of photo-generated current on the surface of the sample.
  3. Capable of scanning the distribution of photo-voltage on the surface of the sample.
  4. Capable of scanning the distribution of open-circuit voltage and short-circuit current.
  5. Capable of analyzing surface contamination.
  6. Capable of analyzing the distribution of short-circuit regions.
  7. Capable of identifying and analyzing microcrack regions.
  8. Capable of analyzing the distribution of minority carrier diffusion length (optional).
Excitation source 405 ±10nm Laser
520 ±10nm Laser
635 ±10nm Laser
830 ±10nm Laser
Scan area ≥100mm x 100mm
Laser spot size Close to TEM00 mode spot
Mapping resolution a. Scanning resolution ≤ 50 µm
b. Scanning resolution can be set by software
Mapping time <4 mins (For 100 mm × 100 mm with 50 µm resolution)
Dimension 60 cm × 60 cm × 100 cm
Software a. LBIC 3D visualization
b. 2D cross-sectional analysis (electrode aspect ratio)
c. Photo-current response distribution analysis (in conjunction with long-wavelength laser source)
d. Data saving and export functions

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